- 您现在的位置：买卖IC网 > Sheet目录344 > MR4A08BCYS35R (Everspin Technologies Inc)IC MRAM 16MBIT 35NS 44TSOP
Timing Specifications
Table 3.4 Write Cycle Timing 1 (W Controlled) 1
MR4A08B
Parameter
Write cycle time 2
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width ( G high)
Write pulse width (G low)
Data valid to end of write
Data hold time
Write low to data Hi-Z 3
Write high to output active 3
Write recovery time
Symbol
t AVAV
t AVWL
t AVWH
t AVWH
t WLWH
t WLEH
t WLWH
t WLEH
t DVWH
t WHDX
t WLQZ
t WHQX
t WHAX
Min
35
0
18
20
15
15
10
0
0
3
12
Max
-
-
-
-
-
-
-
-
12
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
2
3
All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus
contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after
W goes low, the output will remain in a high impedance state. After W, E or UB/LB has been brought high, the signal must
remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being
asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage. At any given
voltage or temperature, t WLQZ (max) < t WHQX (min)
Figure 3.4 Write Cycle Timing 1 (W Controlled)
t AVAV
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
t AVWL
t AVWH
t WLEH
t WLWH
t WHAX
t DVWH
t WHDX
D (DATA IN)
t WLQZ
DATA VALID
Q (DATA OUT)
Hi -Z
Hi -Z
t WHQX
Copyright ? Everspin Technologies 2013
9
MR4A08B Rev. 6 9/2013
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRJ-5385-01
CONN RCPT 8POS 2GRN 1PORT PCB
MRJ548501
CONN MOD JACK 8P8C R/A GRN/GRN
MSC8122ADSE
KIT ADVANCED DEV SYSTEM 8122
MSC8126ADSE
KIT ADVANCED DEV SYSTEM 8126
MSC8144ADS
ADS FOR MSC8144 DEVICE
MSC8156EVM
EVAL MODULE FOR MSC8156 LC
MSL1060AW
IC LED DRIVER 6 STRING
MSL1061AV
IC LED DRIVER 6 STRING
相关代理商/技术参数
MR4A08BMA35
功能描述:NVRAM
RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A08BMA35R
功能描述:NVRAM
RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A08BMYS35
功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A08BMYS35R
功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A08BYS35
功能描述:NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A08BYS35R
功能描述:NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
MR4A16ACTS35C
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR4A16ACYS35
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM